In_xGa_1−xAs Schottky diode grown by liquid phase epitaxy

Authors

Charlene T. Hintay National Institute of Physics, University of the Philippines Diliman
Kristine I. Manibog National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

In_xGa_1−xAs epilayer was grown on semi-insulating GaAs substrate using Liquid Phase Epitaxy (LPE). Through X-ray Diffractometry (XRD) the calculated Indium mole fraction is approximately 0.017. The thickness of the grown film was measured using Scanning Electron Microscopy (SEM) and was found out to be 8 μm. Schottky photodiode with 250 μm diameter mesa was fashioned from the grown epilayer. Titanium-Gold (Ti/Au) Schottky top contact and Gold-Germanium (Au/Ge) ohmic bottom contact was deposited onto the sample. The responsivity measurement of the fabricated device shows a peak at wavelength 8700 Å, which corresponds to a responsivity value of 0.4 A/W.

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Issue

2004: Proceedings of the 22nd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2004-PB-37

Section

Poster Session PB

Published

2004-10-25

How to Cite

[1]

CT Hintay, KI Manibog, and AA Salvador, InxGa1−xAs Schottky diode grown by liquid phase epitaxy, Proceedings of the Samahang Pisika ng Pilipinas 22, SPP-2004-PB-37 (2004). URL: https://proceedings.spp-online.org/article/view/SPP-2004-PB-37.