InxGa1−xAs Schottky diode grown by liquid phase epitaxy

Authors

  • Charlene T. Hintay ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Kristine I. Manibog ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

InxGa1−xAs epilayer was grown on semi-insulating GaAs substrate using Liquid Phase Epitaxy (LPE). Through X-ray Diffractometry (XRD) the calculated Indium mole fraction is approximately 0.017. The thickness of the grown film was measured using Scanning Electron Microscopy (SEM) and was found out to be 8 μm. Schottky photodiode with 250 μm diameter mesa was fashioned from the grown epilayer. Titanium-Gold (Ti/Au) Schottky top contact and Gold-Germanium (Au/Ge) ohmic bottom contact was deposited onto the sample. The responsivity measurement of the fabricated device shows a peak at wavelength 8700 Å, which corresponds to a responsivity value of 0.4 A/W.

SPP 2004 Proceedings Cover

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Published

2004-10-25

Issue

2004: Proceedings of the 22nd Samahang Pisika ng Pilipinas Physics Congress

Section

Poster Session PB

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How to Cite

[1]
“InxGa1−xAs Schottky diode grown by liquid phase epitaxy”, Proc. SPP, vol. 22, no. 1, p. SPP-2004-PB-37, Oct. 2004, Accessed: Apr. 08, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2004-PB-37