In_xGa_1−xAs Schottky diode grown by liquid phase epitaxy

Authors

Charlene T. Hintay ⋅ PH National Institute of Physics, University of the Philippines Diliman
Kristine I. Manibog ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

In_xGa_1−xAs epilayer was grown on semi-insulating GaAs substrate using Liquid Phase Epitaxy (LPE). Through X-ray Diffractometry (XRD) the calculated Indium mole fraction is approximately 0.017. The thickness of the grown film was measured using Scanning Electron Microscopy (SEM) and was found out to be 8 μm. Schottky photodiode with 250 μm diameter mesa was fashioned from the grown epilayer. Titanium-Gold (Ti/Au) Schottky top contact and Gold-Germanium (Au/Ge) ohmic bottom contact was deposited onto the sample. The responsivity measurement of the fabricated device shows a peak at wavelength 8700 Å, which corresponds to a responsivity value of 0.4 A/W.

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Issue

2004: Proceedings of the 22nd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2004-PB-37

Section

Poster Session PB

Published

2004-10-25

How to Cite

[1]

CT Hintay, KI Manibog, and AA Salvador, InxGa1−xAs Schottky diode grown by liquid phase epitaxy, Proceedings of the Samahang Pisika ng Pilipinas 22, SPP-2004-PB-37 (2004). URL: https://proceedings.spp-online.org/article/view/SPP-2004-PB-37.