A comparative study of the optoelectronic properties of 250 μm and 60 μm InGaAs photodetectors

Authors

John Vincent Misa ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Roland V. Sarmago ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

The optoelectronic properties of 250 μm and 60 μm diameter mesa InGaAs-based photodetectors are compared through their I-V characteristics and responsivity. The 250 μm device exhibits a turn on voltage at 2 V, while the breakdown voltage is at 12 V. Its 60 μm counterpart has a turn on voltage of 1.2 V and a breakdown voltage of 4.8 V. The spectral responsivity at 9025 Å of the 250 μm device was found to be 0.32 A/W with the smaller device at 0.24 A/W. The differences in optoelectronic properties can be attributed differences in device fabrication, specifically in the metallization of the p and n contacts.

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Issue

2004: Proceedings of the 22nd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2004-PB-12

Section

Poster Session PB

Published

2004-10-25

How to Cite

[1]

JV Misa, A Salvador, and RV Sarmago, A comparative study of the optoelectronic properties of 250 μm and 60 μm InGaAs photodetectors, Proceedings of the Samahang Pisika ng Pilipinas 22, SPP-2004-PB-12 (2004). URL: https://proceedings.spp-online.org/article/view/SPP-2004-PB-12.