Monte Carlo simulation of mobility in Si p⁺-n step junction diode

Authors

Darwin B. Putungan ⋅ PH Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños
Raymond D. Encarnacion ⋅ PH Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños
A. G. Briones ⋅ PH Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños
Eric T. Miranda ⋅ PH Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños
Rogel Mari D. Sese ⋅ PH Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños

Abstract

A Monte Carlo simulation of mobility in Si p⁺-n step junction diode was conducted with four input distributions: Low Temperature Low Doping Concentration (LTLD), Low Temperature High Doping Concentration (LTHD), High Temperature Low Doping Concentration (HTLD), and High Temperature High Doping Concentration (HTHD). The peak hole mobility value observed for the LTLD input distribution was in the range 480 – 600 cm²/V⋅sec with a 0.126094 or approximately 13% probability of occurrence. For the LTHD distribution, the two significant mobility peaks observed were 120 – 240 cm²/V⋅sec with a 0.4261 or approximately 43% probability of occurrence and 240 – 360 cm²/V⋅sec with a 0.3289 or approximately 33% probability of occurrence. The mobility range 120 – 240 cm²/V⋅sec was the highest mobility peak observed for the HTLD distribution with a probability of 0.48186 or approximately 48%. A probability of 0.959997 or approximately 96% in the range 0 – 240 cm²/V⋅sec was observed for HTHD distribution. From the results, an increase in the temperature and doping concentration values tends to shift the hole mobility to lower values.

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Issue

2004: Proceedings of the 22nd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2004-PA-29

Section

Poster Session PA

Published

2004-10-25

How to Cite

[1]

DB Putungan, RD Encarnacion, AG Briones, ET Miranda, and RMD Sese, Monte Carlo simulation of mobility in Si p+-n step junction diode, Proceedings of the Samahang Pisika ng Pilipinas 22, SPP-2004-PA-29 (2004). URL: https://proceedings.spp-online.org/article/view/SPP-2004-PA-29.