Fabrication and characterization of GaAs-based edge-emitting lasers

Authors

Gabriel Manasan National Institute of Physics, University of the Philippines Diliman
Elmer Estacio National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

GaAs-based laser devices have a variety of optoelectronic applications. This study details the fabrication of MBE grown GaAs-based lasers, namely a GaAs edge emitting laser, and an InGaAs edgeemitting laser. A Current Voltage (I-V) and optical spectroscopy characterization setup was also developed, allowing the investigation of the optoelectronic characteristics of the lasers. These are then compared to the characteristics of an externally obtained InGaAs edge emitting laser. For the edge-emitting lasers, a comparatively high value of J_th=4.4 kA/cm² was obtained. This high value was attributed to poor metallization and reflectivity.

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Issue

2004: Proceedings of the 22nd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2004-PA-14

Section

Poster Session PA

Published

2004-10-25

How to Cite

[1]

G Manasan, E Estacio, and A Salvador, Fabrication and characterization of GaAs-based edge-emitting lasers, Proceedings of the Samahang Pisika ng Pilipinas 22, SPP-2004-PA-14 (2004). URL: https://proceedings.spp-online.org/article/view/SPP-2004-PA-14.