Modeling the profile of an oxide-confined p-i-n light-emitting diode

Authors

Mariel Grace S. Dimamay National Institute of Physics, University of the Philippines Diliman
Alfred Samson National Institute of Physics, University of the Philippines Diliman
Elmer Estacio National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Oxide-confined light-emitting diodes were fabricated and tested. Emission measurements were performed on three devices, namely: unoxidized device A, oxidized device B with 114.67 μm-diameter aperture, and oxidized device C with 37.12 μm-diameter aperture.
The profile of the devices was modeled by considering the sloping mesa edge and oxide front. The device emission spectra were then simulated using the model, and were compared with the experimentally obtained spectra. Both experimental and calculated spectra showed similar trends, that is, further oxidation of the AlAs layers in the devices leads to the suppression of the peaks associated with the cavity modes and to the broadening of the emission spectra.

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Issue

2004: Proceedings of the 22nd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2004-PA-13

Section

Poster Session PA

Published

2004-10-25

How to Cite

[1]

MGS Dimamay, A Samson, E Estacio, and AA Salvador, Modeling the profile of an oxide-confined p-i-n light-emitting diode, Proceedings of the Samahang Pisika ng Pilipinas 22, SPP-2004-PA-13 (2004). URL: https://proceedings.spp-online.org/article/view/SPP-2004-PA-13.