Device fabrication of 60 μm resonant cavity light emitting diode

Authors

Joanne Justine C. Reyes Materials Science and Engineering Program, University of the Philippines Diliman
Wilfredo Bisquera Materials Science and Engineering Program, University of the Philippines Diliman
Roland V. Sarmago National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

An array of 60 μm diameter resonant cavity light emitting diodes (RCLEDs) suited for coupling with fiber optic were fabricated using standard device fabrication technique. I-V characterization was used to determine the viability of the device fabricating processes and modified emission set-up was used to determine the characteristic emission spectra of the fabricated device. Under forward bias, the turn-on voltage of the devices is 1.95 to 2.45V with a series resistance of 17 to 14 kW and characteristic spectra under the near infrared spectra. Under reverse bias, the devices showed a breakdown voltage of 35V.

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Issue

2004: Proceedings of the 22nd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2004-PA-10

Section

Poster Session PA

Published

2004-10-25

How to Cite

[1]

JJC Reyes, W Bisquera, RV Sarmago, and AA Salvador, Device fabrication of 60 μm resonant cavity light emitting diode, Proceedings of the Samahang Pisika ng Pilipinas 22, SPP-2004-PA-10 (2004). URL: https://proceedings.spp-online.org/article/view/SPP-2004-PA-10.