Device fabrication of 60 μm resonant cavity light emitting diode
Abstract
An array of 60 μm diameter resonant cavity light emitting diodes (RCLEDs) suited for coupling with fiber optic were fabricated using standard device fabrication technique. I-V characterization was used to determine the viability of the device fabricating processes and modified emission set-up was used to determine the characteristic emission spectra of the fabricated device. Under forward bias, the turn-on voltage of the devices is 1.95 to 2.45V with a series resistance of 17 to 14 kW and characteristic spectra under the near infrared spectra. Under reverse bias, the devices showed a breakdown voltage of 35V.