Time resolved photoluminescence of a GaAs/AlGaAs RCE structure

Authors

Florencio D. Recoleto Jr. ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
Carlo Amadeo Alonzo ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jennette Mateo ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We present results on the time-resolved photoluminescence (TRPL) of a GaAs/AlGaAs resonant cavity enhanced (RCE) structure. The PL decay time, τ_d = 150 ps for RCE is faster compared to a conventional p-i-n structure. This is due to Fabry-Perot resonant microcavity (FPRM) enhancement and standing wave effect (SWE) that increases the transition probability of electron-hole recombination. The PL decay time yields information on the speed of semiconductor structures when they are fabricated into devices.

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Issue

2004: Proceedings of the 22nd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2004-1A-04

Section

Optics and Photonics

Published

2004-10-25

How to Cite

[1]

FD Recoleto, E Estacio, CA Alonzo, J Mateo, and A Salvador, Time resolved photoluminescence of a GaAs/AlGaAs RCE structure, Proceedings of the Samahang Pisika ng Pilipinas 22, SPP-2004-1A-04 (2004). URL: https://proceedings.spp-online.org/article/view/SPP-2004-1A-04.