Time resolved photoluminescence of a GaAs/AlGaAs RCE structure

Authors

Florencio D. Recoleto Jr. National Institute of Physics, University of the Philippines Diliman
Elmer Estacio National Institute of Physics, University of the Philippines Diliman
Carlo Amadeo Alonzo National Institute of Physics, University of the Philippines Diliman
Jennette Mateo National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

We present results on the time-resolved photoluminescence (TRPL) of a GaAs/AlGaAs resonant cavity enhanced (RCE) structure. The PL decay time, τ_d = 150 ps for RCE is faster compared to a conventional p-i-n structure. This is due to Fabry-Perot resonant microcavity (FPRM) enhancement and standing wave effect (SWE) that increases the transition probability of electron-hole recombination. The PL decay time yields information on the speed of semiconductor structures when they are fabricated into devices.

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Issue

2004: Proceedings of the 22nd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2004-1A-04

Section

Optics and Photonics

Published

2004-10-25

How to Cite

[1]

FD Recoleto, E Estacio, CA Alonzo, J Mateo, and A Salvador, Time resolved photoluminescence of a GaAs/AlGaAs RCE structure, Proceedings of the Samahang Pisika ng Pilipinas 22, SPP-2004-1A-04 (2004). URL: https://proceedings.spp-online.org/article/view/SPP-2004-1A-04.