Time resolved photoluminescence of a GaAs/AlGaAs RCE structure

Authors

  • Florencio D. Recoleto Jr. ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Carlo Amadeo Alonzo ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Jennette Mateo ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We present results on the time-resolved photoluminescence (TRPL) of a GaAs/AlGaAs resonant cavity enhanced (RCE) structure. The PL decay time, Ï„d = 150 ps for RCE is faster compared to a conventional p-i-n structure. This is due to Fabry-Perot resonant microcavity (FPRM) enhancement and standing wave effect (SWE) that increases the transition probability of electron-hole recombination. The PL decay time yields information on the speed of semiconductor structures when they are fabricated into devices.

SPP 2004 Proceedings Cover

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Published

2004-10-25

Issue

2004: Proceedings of the 22nd Samahang Pisika ng Pilipinas Physics Congress

Section

Optics and Photonics

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How to Cite

[1]
“Time resolved photoluminescence of a GaAs/AlGaAs RCE structure”, Proc. SPP, vol. 22, no. 1, pp. SPP–2004, Oct. 2004, Accessed: Apr. 29, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2004-1A-04