Characteristics of an oxide-confined GaAs/AlGaAs vertical cavity surface emitting laser (VCSEL) emitting at 842 nm

Authors

Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
Gabriel Manasan ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnita Podpod ⋅ PH National Institute of Physics, University of the Philippines Diliman
Alfred Samson ⋅ PH National Institute of Physics, University of the Philippines Diliman
Francisco Agra ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Laser operation is achieved at 842 nm for an oxide-confined GaAs/AlGaAs VCSEL. The MBE-grown VCSEL heterostructure was fabricated into arrays of 250-micron diameter mesas and were oxidized leaving approximately the inner 25-micron diameter region unoxidized. Indium contacts were deposited by thermal evaporation on the mesas. Optical spectroscopy revealed a FWHM of ~15Å and emission intensity vs. injection current (L-I) experiments confirmed room temperature laser operation at a pulsed injection current of 4mA.

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Issue

2003: Proceedings of the 21st Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2003-PS-04

Section

Plenary Sessions

Published

2003-10-22

How to Cite

[1]

E Estacio, G Manasan, A Somintac, A Podpod, A Samson, F Agra, and A Salvador, Characteristics of an oxide-confined GaAs/AlGaAs vertical cavity surface emitting laser (VCSEL) emitting at 842 nm, Proceedings of the Samahang Pisika ng Pilipinas 21, SPP-2003-PS-04 (2003). URL: https://proceedings.spp-online.org/article/view/SPP-2003-PS-04.