Characteristics of an oxide-confined GaAs/AlGaAs vertical cavity surface emitting laser (VCSEL) emitting at 842 nm

Authors

Elmer Estacio National Institute of Physics, University of the Philippines Diliman
Gabriel Manasan National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman
Arnita Podpod National Institute of Physics, University of the Philippines Diliman
Alfred Samson National Institute of Physics, University of the Philippines Diliman
Francisco Agra National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Laser operation is achieved at 842 nm for an oxide-confined GaAs/AlGaAs VCSEL. The MBE-grown VCSEL heterostructure was fabricated into arrays of 250-micron diameter mesas and were oxidized leaving approximately the inner 25-micron diameter region unoxidized. Indium contacts were deposited by thermal evaporation on the mesas. Optical spectroscopy revealed a FWHM of ~15Å and emission intensity vs. injection current (L-I) experiments confirmed room temperature laser operation at a pulsed injection current of 4mA.

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Issue

2003: Proceedings of the 21st Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2003-PS-04

Section

Plenary Sessions

Published

2003-10-22

How to Cite

[1]

E Estacio, G Manasan, A Somintac, A Podpod, A Samson, F Agra, and A Salvador, Characteristics of an oxide-confined GaAs/AlGaAs vertical cavity surface emitting laser (VCSEL) emitting at 842 nm, Proceedings of the Samahang Pisika ng Pilipinas 21, SPP-2003-PS-04 (2003). URL: https://proceedings.spp-online.org/article/view/SPP-2003-PS-04.