Characteristics of an oxide-confined GaAs/AlGaAs vertical cavity surface emitting laser (VCSEL) emitting at 842 nm

Authors

  • Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Gabriel Manasan ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Arnita Podpod ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Alfred Samson ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Francisco Agra ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Laser operation is achieved at 842 nm for an oxide-confined GaAs/AlGaAs VCSEL. The MBE-grown VCSEL heterostructure was fabricated into arrays of 250-micron diameter mesas and were oxidized leaving approximately the inner 25-micron diameter region unoxidized. Indium contacts were deposited by thermal evaporation on the mesas. Optical spectroscopy revealed a FWHM of ~15Ã… and emission intensity vs. injection current (L-I) experiments confirmed room temperature laser operation at a pulsed injection current of 4mA.

SPP 2003 Proceedings Cover

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Published

2003-10-22

Issue

2003: Proceedings of the 21st Samahang Pisika ng Pilipinas Physics Congress

Section

Plenary Sessions

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How to Cite

[1]
“Characteristics of an oxide-confined GaAs/AlGaAs vertical cavity surface emitting laser (VCSEL) emitting at 842 nm”, Proc. SPP, vol. 21, no. 1, p. SPP-2003-PS-04, Oct. 2003, Accessed: Apr. 09, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2003-PS-04