Characteristics of an oxide-confined GaAs/AlGaAs vertical cavity surface emitting laser (VCSEL) emitting at 842 nm
Laser operation is achieved at 842 nm for an oxide-confined GaAs/AlGaAs VCSEL. The MBE-grown VCSEL heterostructure was fabricated into arrays of 250-micron diameter mesas and were oxidized leaving approximately the inner 25-micron diameter region unoxidized. Indium contacts were deposited by thermal evaporation on the mesas. Optical spectroscopy revealed a FWHM of ~15Å and emission intensity vs. injection current (L-I) experiments confirmed room temperature laser operation at a pulsed injection current of 4mA.