Liquid phase epitaxial growth of In_xGa_1−xAs on GaAs substrate

Authors

Ma. Frantessa T. Casco National Institute of Physics, University of the Philippines Diliman
Charlene T. Hintay National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

In_xGa_1−xAs (0 < x < 0.03) epilayers were grown on GaAs substrate using liquid phase epitaxy (LPE). Equilibrium cooling and step-cooling techniques were utilized for the epitaxial growth process. Equilibrium cooling technique was able to grow an 18 μm film with an In mole fraction of approximately 0.01. On the other hand using step-cooling technique as an attempt to increase In mole fraction yielded a 0.6 μm and 10 μm films with mole fractions of 0.017 and 0.03, respectively. Film thicknesses were measured using SEM and mole fractions were computed using the XRD results. 10K PL verified the mole fraction obtained from XRD.

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Issue

2003: Proceedings of the 21st Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2003-PB-10

Section

Poster Session PB

Published

2003-10-22

How to Cite

[1]

MFT Casco, CT Hintay, and AA Salvador, Liquid phase epitaxial growth of InxGa1−xAs on GaAs substrate, Proceedings of the Samahang Pisika ng Pilipinas 21, SPP-2003-PB-10 (2003). URL: https://proceedings.spp-online.org/article/view/SPP-2003-PB-10.