Anomalous intensity degradation in the temperature-dependent photoluminescence of 50Å GaAs/AlGaAs multiple quantum wells grown on on-axis and off-axis substrates

Authors

  • Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Jennette Mateo ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Joanes Paulus Sy ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Kristin Bautista ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Luisito Guiao ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Temperature-dependent photoluminescence (PL) spectroscopy from 10 K up to 300 K was performed on 50 Å GaAs/AlGaAs multiple quantum wells (MQW's) grown on on-axis and off-axis GaAs substrates. An anomalous dip in the integrated PL intensity in the 80 K to 130 K region was observed for the on-axis sample. The structural similarity of the two samples was verified via X-Ray diffractometry (XRD). Thus, differences in the PL data is attributed to deep-level impurities introduced during the MBE growth process. This assertion is verified by deep level transient spectroscopy (DLTS).

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Published

2003-10-22

Issue

2003: Proceedings of the 21st Samahang Pisika ng Pilipinas Physics Congress

Section

Poster Session PA

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How to Cite

[1]
“Anomalous intensity degradation in the temperature-dependent photoluminescence of 50Å GaAs/AlGaAs multiple quantum wells grown on on-axis and off-axis substrates”, Proc. SPP, vol. 21, no. 1, p. SPP-2003-PA-03, Oct. 2003, Accessed: Apr. 30, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2003-PA-03