Anomalous intensity degradation in the temperature-dependent photoluminescence of 50Å GaAs/AlGaAs multiple quantum wells grown on on-axis and off-axis substrates

Authors

  • Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Jennette Mateo ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Joanes Paulus Sy ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Kristin Bautista ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Luisito Guiao ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Temperature-dependent photoluminescence (PL) spectroscopy from 10 K up to 300 K was performed on 50 Å GaAs/AlGaAs multiple quantum wells (MQW's) grown on on-axis and off-axis GaAs substrates. An anomalous dip in the integrated PL intensity in the 80 K to 130 K region was observed for the on-axis sample. The structural similarity of the two samples was verified via X-Ray diffractometry (XRD). Thus, differences in the PL data is attributed to deep-level impurities introduced during the MBE growth process. This assertion is verified by deep level transient spectroscopy (DLTS).

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Issue

Article ID

SPP-2003-PA-03

Section

Poster Session PA

Published

2003-10-22

How to Cite

[1]
E Estacio, J Mateo, JP Sy, K Bautista, L Guiao, A Somintac, and A Salvador, Anomalous intensity degradation in the temperature-dependent photoluminescence of 50Å GaAs/AlGaAs multiple quantum wells grown on on-axis and off-axis substrates, Proceedings of the Samahang Pisika ng Pilipinas 21, SPP-2003-PA-03 (2003). URL: https://proceedings.spp-online.org/article/view/SPP-2003-PA-03.