Anomalous intensity degradation in the temperature-dependent photoluminescence of 50Å GaAs/AlGaAs multiple quantum wells grown on on-axis and off-axis substrates

Authors

Elmer Estacio National Institute of Physics, University of the Philippines Diliman
Jennette Mateo National Institute of Physics, University of the Philippines Diliman
Joanes Paulus Sy National Institute of Physics, University of the Philippines Diliman
Kristin Bautista National Institute of Physics, University of the Philippines Diliman
Luisito Guiao National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Temperature-dependent photoluminescence (PL) spectroscopy from 10 K up to 300 K was performed on 50 Å GaAs/AlGaAs multiple quantum wells (MQW's) grown on on-axis and off-axis GaAs substrates. An anomalous dip in the integrated PL intensity in the 80 K to 130 K region was observed for the on-axis sample. The structural similarity of the two samples was verified via X-Ray diffractometry (XRD). Thus, differences in the PL data is attributed to deep-level impurities introduced during the MBE growth process. This assertion is verified by deep level transient spectroscopy (DLTS).

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Issue

2003: Proceedings of the 21st Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2003-PA-03

Section

Poster Session PA

Published

2003-10-22

How to Cite

[1]

E Estacio, J Mateo, JP Sy, K Bautista, L Guiao, A Somintac, and A Salvador, Anomalous intensity degradation in the temperature-dependent photoluminescence of 50Å GaAs/AlGaAs multiple quantum wells grown on on-axis and off-axis substrates, Proceedings of the Samahang Pisika ng Pilipinas 21, SPP-2003-PA-03 (2003). URL: https://proceedings.spp-online.org/article/view/SPP-2003-PA-03.