Raman spectroscopy of a single layer and three coupled layers of InAs/GaAs quantum dots

Authors

Marie Josephine M. De Luna ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We present our results on nonresonant Raman scattering measurements of a single layer and three coupled layers of InAs/GaAs quantum dots (QDs). The LO phonon of the coupled dots has a higher Raman shift with respect to bulk values than that of the single layer dots. This indicates that the coupled QDs are under greater compressive strain than the single layer QDs. The coupled QDs are, therefore, bigger in size compared to the single layer QDs. The size of these dots is a crucial issue in the fabrication of QD lasers for 1.3 μm emission. However, strain-induced intermixing effects also need to be taken into account.

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Issue

2003: Proceedings of the 21st Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2003-3F-05

Section

Optics and Photonics

Published

2003-10-22

How to Cite

[1]

MJM De Luna, A Somintac, E Estacio, and A Salvador, Raman spectroscopy of a single layer and three coupled layers of InAs/GaAs quantum dots, Proceedings of the Samahang Pisika ng Pilipinas 21, SPP-2003-3F-05 (2003). URL: https://proceedings.spp-online.org/article/view/SPP-2003-3F-05.