Optical properties of in situ annealed InAs/GaAs quantum dots

Authors

Jennette Mateo National Institute of Physics, University of the Philippines Diliman
Elmer Estacio National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman
Arnita Podpod National Institute of Physics, University of the Philippines Diliman
Marie Josephine De Luna National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

This work investigates the effect of in situ annealing on the size distribution of MBE-grown InAs/GaAs quantum dots (QDs) by photoluminescence (PL) measurements. In situ annealed QDs exhibit two distinct PL peaks as compared to that of the unannealed QDs, exhibiting only one peak. The annealed sample has a peak at smaller wavelength (blue-shifted) and with narrower FWHM suggesting higher degree of uniformity in size. The blue-shift is attributed to more dominant increase in Ga content of the QDs through In/Ga interdiffusion, which occurs during annealing. Thus, annealing increases the size of QDs, but more dominantly, also increases the Ga content producing a blue-shift in PL spectrum. The increase in dot size and In/Ga interdiffusion were further verified by Raman spectroscopy.

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Issue

2003: Proceedings of the 21st Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2003-2C-02

Section

Optics and Photonics

Published

2003-10-22

How to Cite

[1]

J Mateo, E Estacio, A Somintac, A Podpod, MJ De Luna, and A Salvador, Optical properties of in situ annealed InAs/GaAs quantum dots, Proceedings of the Samahang Pisika ng Pilipinas 21, SPP-2003-2C-02 (2003). URL: https://proceedings.spp-online.org/article/view/SPP-2003-2C-02.