Transition of low temperature DLC thin films to diamond via dc discharge CVD

Authors

Giovanni M. Malapit Department of Physical Sciences, University of the Philippines Baguio
Anthony Francis G. Montecillo National Institute of Physics, University of the Philippines Diliman
Henry J. Ramos National Institute of Physics, University of the Philippines Diliman

Abstract

CVD diamond and diamond-like carbon (DLC) films were deposited on silicon substrate at relatively low average substrate temperatures ranging from 175°C to 275°C by d.c. plasma chemical vapor deposition. Substrates were placed on a molybdenum cap holder enveloped by a controlled heater rated at 200W. Methane (CH₄) and hydrogen (H₂) were used as gas reactants in varying ratios from 1-5% volume CH₄ in a total gas filling pressure of 10 Torr. Deposition times ranged from 5 to 15 hours. Raman spectroscopy, X-ray diffraction (XRD), and scanning electron microscopy confirmed the produced films. The Raman and XRD results indicating the transition from DLC to diamond film under certain deposition conditions are discussed via a model involving the reaction of hydrogen in the growth process of these films.

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Issue

2003: Proceedings of the 21st Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2003-2B-01

Section

Plasma Physics

Published

2003-10-22

How to Cite

[1]

GM Malapit, AFG Montecillo, and HJ Ramos, Transition of low temperature DLC thin films to diamond via dc discharge CVD, Proceedings of the Samahang Pisika ng Pilipinas 21, SPP-2003-2B-01 (2003). URL: https://proceedings.spp-online.org/article/view/SPP-2003-2B-01.