Bandstructure characterization of GaAs/AlGaAs MQW of varying well widths and temperature using reflectance spectroscopy

Authors

Christine Ison National Institute of Physics, University of the Philippines Diliman and Department of Physical Sciences, University of the Philippines Baguio
Elmer Estacio National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Temperature dependent reflectivity measurements were performed on GaAs/AlGaAs MQWs of widths 50Å, 90Å, and 120Å. Reflectance data shows three well-resolved peaks corresponding to 1HH-1C and 1LH-1C excitonic transitions and the HH continuum at temperatures up to 140K. A dielectric model was used to extract the values of these excitonic transitions. Comparison of the obtained values with the theoretical yields good agreement up to 140K before significant continuum contribution manifests.

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Issue

2003: Proceedings of the 21st Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2003-1J-04

Section

Optics and Photonics

Published

2003-10-22

How to Cite

[1]

C Ison, E Estacio, A Somintac, and A Salvador, Bandstructure characterization of GaAs/AlGaAs MQW of varying well widths and temperature using reflectance spectroscopy, Proceedings of the Samahang Pisika ng Pilipinas 21, SPP-2003-1J-04 (2003). URL: https://proceedings.spp-online.org/article/view/SPP-2003-1J-04.