Excitation fluence dependence of terahertz radiation mechanism from femtosecond-laser-irradiated InAs under magnetic field

Authors

Hiroshi Takahashi Institute for Molecular Science, Okazaki, Japan and Department of Photo Science, The Graduate University for Advanced Studies, Japan
Alex Quema Institute for Molecular Science, Okazaki, Japan and Physics Department, De La Salle University, Philippines
Shingo Ono Institute for Molecular Science, Okazaki, Japan and Department of Photo Science, The Graduate University for Advanced Studies, Japan
Nobuhiko Sarukura Institute for Molecular Science, Okazaki, Japan and Department of Photo Science, The Graduate University for Advanced Studies, Japan

Abstract

The excitation fluence and magnetic field dependence of terahertz (THz) radiation power from InAs is investigated. At low excitation fluence, an enhancement of the THz-radiation power is observed independent of the magnetic-field direction. As the excitation fluence is increased, a crossover of terahertz radiation mechanism is observed. At excitation fluence above this crossover, the radiation power is either enhanced or reduced depending on the magnetic-field direction. These results are explained by considering the different THz-radiation mechanisms from the InAs surface with or without photoexcited carrier screening.

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Issue

2003: Proceedings of the 21st Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2003-1J-01

Section

Optics and Photonics

Published

2003-10-22

How to Cite

[1]

H Takahashi, A Quema, S Ono, and N Sarukura, Excitation fluence dependence of terahertz radiation mechanism from femtosecond-laser-irradiated InAs under magnetic field, Proceedings of the Samahang Pisika ng Pilipinas 21, SPP-2003-1J-01 (2003). URL: https://proceedings.spp-online.org/article/view/SPP-2003-1J-01.