Oxide depth distribution in InP

Authors

Terencio D. Lacuesta ⋅ PH Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños
Stephen Thurgate ⋅ AU School of Mathematical and Physical Sciences, Murdoch University, Australia
Terrence Jach ⋅ US National Institute of Standards and Technology, Maryland, USA

Abstract

Oxide layers on semiconductor based electronic devices play an important role in the performance of the device. Oxide thickness of about 5 nm are projected for future designs. Common commercial cleaning and etching preparations of the semiconductor materials produce oxide layers with a thickness in this range. The oxidized surface of indium phosphide (InP) was studied. The techniques of Auger Electron Spectroscopy (AES) and Grazing Incidence X-ray Photoelectron Sprectroscopy (GIXPS) were employed. These techniques provide a truly surface sensitive analysis of the material. The native oxide of InP was measured to have a thickness of about 2 nm. The chemical composition of the layer was also obtained.

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Issue

2002: Proceedings of the 20th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2002-PP-17

Section

Condensed Matter and Plasma Physics

Published

2002-10-23

How to Cite

[1]

TD Lacuesta, S Thurgate, and T Jach, Oxide depth distribution in InP, Proceedings of the Samahang Pisika ng Pilipinas 20, SPP-2002-PP-17 (2002). URL: https://proceedings.spp-online.org/article/view/SPP-2002-PP-17.