Oxide depth distribution in InP

Authors

  • Terencio D. Lacuesta Institute of Mathematical Sciences and Physics, University of the Philippines Los BaƱos
  • Stephen Thurgate School of Mathematical and Physical Sciences, Murdoch University, Australia
  • Terrence Jach National Institute of Standards and Technology, Maryland, USA

Abstract

Oxide layers on semiconductor based electronic devices play an important role in the performance of the device. Oxide thickness of about 5 nm are projected for future designs. Common commercial cleaning and etching preparations of the semiconductor materials produce oxide layers with a thickness in this range. The oxidized surface of indium phosphide (InP) was studied. The techniques of Auger Electron Spectroscopy (AES) and Grazing Incidence X-ray Photoelectron Sprectroscopy (GIXPS) were employed. These techniques provide a truly surface sensitive analysis of the material. The native oxide of InP was measured to have a thickness of about 2 nm. The chemical composition of the layer was also obtained.

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Issue

Article ID

SPP-2002-PP-17

Section

Condensed Matter and Plasma Physics

Published

2002-10-23

How to Cite

[1]
TD Lacuesta, S Thurgate, and T Jach, Oxide depth distribution in InP, Proceedings of the Samahang Pisika ng Pilipinas 20, SPP-2002-PP-17 (2002). URL: https://proceedings.spp-online.org/article/view/SPP-2002-PP-17.