Oxide depth distribution in InP

Abstract

Oxide layers on semiconductor based electronic devices play an important role in the performance of the device. Oxide thickness of about 5 nm are projected for future designs. Common commercial cleaning and etching preparations of the semiconductor materials produce oxide layers with a thickness in this range. The oxidized surface of indium phosphide (InP) was studied. The techniques of Auger Electron Spectroscopy (AES) and Grazing Incidence X-ray Photoelectron Sprectroscopy (GIXPS) were employed. These techniques provide a truly surface sensitive analysis of the material. The native oxide of InP was measured to have a thickness of about 2 nm. The chemical composition of the layer was also obtained.