Pulsed-laser deposited TiN₂ coatings on silicon substrate

Authors

Alva Lolit Ortile ⋅ PH Physics Department, De La Salle University
Kelwin Law ⋅ PH Physics Department, De La Salle University
Jacqueline Yu Eng Hong ⋅ PH Physics Department, De La Salle University
Gil Nonato C. Santos ⋅ PH Physics Department, De La Salle University
Reuben V. Quiroga ⋅ PH Physics Department, De La Salle University
Wilson O. Garcia ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

In this study, the pulsed laser deposition technique was used to deposit TiN₂ coatings on silicon. Forty samples were studied. From the results of the SEM and EDX, the optimum parameters for deposition is deposition for two hours with vacuum pressure of 5x10^-4 Torr, nitrogen gas flow between 2 to 10 mbar, substrate temperature of 400°C, pulse wavelength of 1064 nm, pulse excitation energy of 150 mJ, and target to substrate distance of 30 mm. EDX confirmed an atomic composition of 37.419% titanium and 61.85% nitrogen deposited on silicon.

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Issue

2002: Proceedings of the 20th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2002-3F-02

Section

Condensed Matter and Plasma Physics

Published

2002-10-23

How to Cite

[1]

AL Ortile, K Law, J Yu Eng Hong, GNC Santos, RV Quiroga, and WO Garcia, Pulsed-laser deposited TiN2 coatings on silicon substrate, Proceedings of the Samahang Pisika ng Pilipinas 20, SPP-2002-3F-02 (2002). URL: https://proceedings.spp-online.org/article/view/SPP-2002-3F-02.