Pulsed-laser deposited TiN₂ coatings on silicon substrate

Authors

Alva Lolit Ortile Physics Department, De La Salle University
Kelwin Law Physics Department, De La Salle University
Jacqueline Yu Eng Hong Physics Department, De La Salle University
Gil Nonato C. Santos Physics Department, De La Salle University
Reuben V. Quiroga Physics Department, De La Salle University
Wilson O. Garcia National Institute of Physics, University of the Philippines Diliman

Abstract

In this study, the pulsed laser deposition technique was used to deposit TiN₂ coatings on silicon. Forty samples were studied. From the results of the SEM and EDX, the optimum parameters for deposition is deposition for two hours with vacuum pressure of 5x10^-4 Torr, nitrogen gas flow between 2 to 10 mbar, substrate temperature of 400°C, pulse wavelength of 1064 nm, pulse excitation energy of 150 mJ, and target to substrate distance of 30 mm. EDX confirmed an atomic composition of 37.419% titanium and 61.85% nitrogen deposited on silicon.

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Issue

2002: Proceedings of the 20th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2002-3F-02

Section

Condensed Matter and Plasma Physics

Published

2002-10-23

How to Cite

[1]

AL Ortile, K Law, J Yu Eng Hong, GNC Santos, RV Quiroga, and WO Garcia, Pulsed-laser deposited TiN2 coatings on silicon substrate, Proceedings of the Samahang Pisika ng Pilipinas 20, SPP-2002-3F-02 (2002). URL: https://proceedings.spp-online.org/article/view/SPP-2002-3F-02.