Three-dimensional imaging of integrated circuit defects by one-photon optical beam-induced current imaging and confocal reflectance microscopy

Authors

Jelda Jayne Miranda National Institute of Physics, University of the Philippines Diliman
Bernardino Buenaobra National Institute of Physics, University of the Philippines Diliman
Vincent Ricardo Daria National Institute of Physics, University of the Philippines Diliman
Caesar Saloma National Institute of Physics, University of the Philippines Diliman

Abstract

We applied a recent technique of acquiring high contrast images of semiconductor and metal sites to obtain three-dimensional profile of failure regions in an integrated circuit (IC). The method utilizes one-photon optical beam-induced current (1P-OBIC) and confocal reflectance images generated from the same focused excitation beam. The product of confocal and 1P-OBIC image generates high contrast semiconductor sites at a specified axial position. High contrast images of metal sites are produced from the product of the confocal and the complementary 1P-OBIC image. IC defects such as impact damage and electrical overstress (EOS) shows deformity and voids in the three-dimensional images.

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Issue

2002: Proceedings of the 20th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2002-3E-01

Section

Plenary Sessions

Published

2002-10-23

How to Cite

[1]

JJ Miranda, B Buenaobra, VR Daria, and C Saloma, Three-dimensional imaging of integrated circuit defects by one-photon optical beam-induced current imaging and confocal reflectance microscopy, Proceedings of the Samahang Pisika ng Pilipinas 20, SPP-2002-3E-01 (2002). URL: https://proceedings.spp-online.org/article/view/SPP-2002-3E-01.