Three-dimensional imaging of integrated circuit defects by one-photon optical beam-induced current imaging and confocal reflectance microscopy

Authors

Jelda Jayne Miranda ⋅ PH National Institute of Physics, University of the Philippines Diliman
Bernardino Buenaobra ⋅ PH National Institute of Physics, University of the Philippines Diliman
Vincent Ricardo Daria ⋅ PH National Institute of Physics, University of the Philippines Diliman
Caesar Saloma ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We applied a recent technique of acquiring high contrast images of semiconductor and metal sites to obtain three-dimensional profile of failure regions in an integrated circuit (IC). The method utilizes one-photon optical beam-induced current (1P-OBIC) and confocal reflectance images generated from the same focused excitation beam. The product of confocal and 1P-OBIC image generates high contrast semiconductor sites at a specified axial position. High contrast images of metal sites are produced from the product of the confocal and the complementary 1P-OBIC image. IC defects such as impact damage and electrical overstress (EOS) shows deformity and voids in the three-dimensional images.

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Issue

2002: Proceedings of the 20th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2002-3E-01

Section

Plenary Sessions

Published

2002-10-23

How to Cite

[1]

JJ Miranda, B Buenaobra, VR Daria, and C Saloma, Three-dimensional imaging of integrated circuit defects by one-photon optical beam-induced current imaging and confocal reflectance microscopy, Proceedings of the Samahang Pisika ng Pilipinas 20, SPP-2002-3E-01 (2002). URL: https://proceedings.spp-online.org/article/view/SPP-2002-3E-01.