Three-dimensional imaging of integrated circuit defects by one-photon optical beam-induced current imaging and confocal reflectance microscopy
Abstract
We applied a recent technique of acquiring high contrast images of semiconductor and metal sites to obtain three-dimensional profile of failure regions in an integrated circuit (IC). The method utilizes one-photon optical beam-induced current (1P-OBIC) and confocal reflectance images generated from the same focused excitation beam. The product of confocal and 1P-OBIC image generates high contrast semiconductor sites at a specified axial position. High contrast images of metal sites are produced from the product of the confocal and the complementary 1P-OBIC image. IC defects such as impact damage and electrical overstress (EOS) shows deformity and voids in the three-dimensional images.
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