Wet oxidation of AlAs in GaAs and in an AlAs/GaAs multilayer stack

Authors

Francisco A. Agra National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

The selective lateral wet of oxidation of MBE grown AlAs as a single layer of AlAs in GaAs and as AlAs in an AlAs/GaAs multilayer stack was investigated. Onset of AlAs oxidation was observed for the single layer after oxidizing at 430°C for 180 minutes. At an oxidation temperature of 450°C, the oxidation rate of the single AlAs layer was initially fast but decreased to a constant value after 15 minutes. The AlAs in an AlAs/GaAs multilayer stack oxidized at a constant rate from 15 to 60 minutes but at a lower value than the single AlAs layer. AlAs in the n-doped lower layer of the AlAs/GaAs multilayer stack exhibited enhanced oxidation than the p-doped upper layer.
The oxidation rate of AlAs as a single AlAs in GaAs and as AlAs in an AlAs/GaAs multilayer stack begins with rapid oxide growth due to a rate-limiting process. However, as oxidation time progresses, the dominating mechanism is the diffusion of oxidizing species through porosities inherently in the oxide.

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Issue

2002: Proceedings of the 20th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2002-2G-03

Section

Condensed Matter and Plasma Physics

Published

2002-10-23

How to Cite

[1]

FA Agra, AS Somintac, and AA Salvador, Wet oxidation of AlAs in GaAs and in an AlAs/GaAs multilayer stack, Proceedings of the Samahang Pisika ng Pilipinas 20, SPP-2002-2G-03 (2002). URL: https://proceedings.spp-online.org/article/view/SPP-2002-2G-03.