Wet oxidation of AlAs in GaAs and in an AlAs/GaAs multilayer stack

Authors

  • Francisco A. Agra ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

The selective lateral wet of oxidation of MBE grown AlAs as a single layer of AlAs in GaAs and as AlAs in an AlAs/GaAs multilayer stack was investigated. Onset of AlAs oxidation was observed for the single layer after oxidizing at 430°C for 180 minutes. At an oxidation temperature of 450°C, the oxidation rate of the single AlAs layer was initially fast but decreased to a constant value after 15 minutes. The AlAs in an AlAs/GaAs multilayer stack oxidized at a constant rate from 15 to 60 minutes but at a lower value than the single AlAs layer. AlAs in the n-doped lower layer of the AlAs/GaAs multilayer stack exhibited enhanced oxidation than the p-doped upper layer.
The oxidation rate of AlAs as a single AlAs in GaAs and as AlAs in an AlAs/GaAs multilayer stack begins with rapid oxide growth due to a rate-limiting process. However, as oxidation time progresses, the dominating mechanism is the diffusion of oxidizing species through porosities inherently in the oxide.

SPP 2002 Proceedings Cover

Downloads

Published

2002-10-23

Issue

2002: Proceedings of the 20th Samahang Pisika ng Pilipinas Physics Congress

Section

Condensed Matter and Plasma Physics

License

Copyright License Agreement for Full Articles

How to Cite

[1]
“Wet oxidation of AlAs in GaAs and in an AlAs/GaAs multilayer stack”, Proc. SPP, vol. 20, no. 1, pp. SPP–2002, Oct. 2002, Accessed: Apr. 08, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2002-2G-03