Liquid phase epitaxy of Zn-doped GaAs

Authors

Kristin Maria Angelus N. Bautista National Institute of Physics, University of the Philippines Diliman
Frantessa Casco National Institute of Physics, University of the Philippines Diliman
Jennette Mateo National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Gallium arsenide (GaAs) p-type films were successfully grown via the liquid phase epitaxy (LPE) technique. The control of the dopant concentration was achieved by varying the growth temperature. Hall measurements show that carrier concentrations of the grown films varied from 3.0 x 10¹⁷ to 1.0 x 10²⁰ cm^-3 with mobilities ranging from 116 to 53 cm²/Vs.
Photoluminescence (PL) measurements taken at room temperature exhibited a shift in the PL intensity peak of the grown p-GaAs layer, from 1.424 eV to 1.412 eV, indicative of bandgap shrinkage. A peak observed at 1.489 eV at 10K PL measurement was assigned to electron-to-acceptor transitions. At 110K, both band-to-band and electron-to-acceptor transitions were visible, with a separation of 22 meV, corresponding to the ionization energy of Zn.

Downloads

Issue

2002: Proceedings of the 20th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2002-1G-04

Section

Condensed Matter and Plasma Physics

Published

2002-10-23

How to Cite

[1]

KMAN Bautista, F Casco, J Mateo, and AA Salvador, Liquid phase epitaxy of Zn-doped GaAs, Proceedings of the Samahang Pisika ng Pilipinas 20, SPP-2002-1G-04 (2002). URL: https://proceedings.spp-online.org/article/view/SPP-2002-1G-04.