Calculation of absorption coefficient of strained MBE-grown InGaAs/GaAs multiple quantum well by transmission spectroscopy

Authors

Jennette N. Mateo National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman
Elmer Estacio National Institute of Physics, University of the Philippines Diliman
Luisito Guiao National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

The absorption coefficient of strained InGaAs/GaAs multiple quantum wells (MQW) was calculated from transmission measurement. Heavy hole and light hole splitting due to strain and quantum well confinement was observed. The allowed transition energies appeared as peaks in the absorption spectrum. By calculating the strain-dependent band gap, and the quantum well confinement energies at well width L = 110 Å, and mole fraction x = 0.2, the experimentally obtained transition energies are in good agreement with the calculated values.

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Issue

2002: Proceedings of the 20th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2002-1C-04

Section

Condensed Matter and Plasma Physics

Published

2002-10-23

How to Cite

[1]

JN Mateo, A Somintac, E Estacio, L Guiao, and A Salvador, Calculation of absorption coefficient of strained MBE-grown InGaAs/GaAs multiple quantum well by transmission spectroscopy, Proceedings of the Samahang Pisika ng Pilipinas 20, SPP-2002-1C-04 (2002). URL: https://proceedings.spp-online.org/article/view/SPP-2002-1C-04.