Calculation of absorption coefficient of strained MBE-grown InGaAs/GaAs multiple quantum well by transmission spectroscopy

Authors

  • Jennette N. Mateo National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac National Institute of Physics, University of the Philippines Diliman
  • Elmer Estacio National Institute of Physics, University of the Philippines Diliman
  • Luisito Guiao National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

The absorption coefficient of strained InGaAs/GaAs multiple quantum wells (MQW) was calculated from transmission measurement. Heavy hole and light hole splitting due to strain and quantum well confinement was observed. The allowed transition energies appeared as peaks in the absorption spectrum. By calculating the strain-dependent band gap, and the quantum well confinement energies at well width L = 110 Ã…, and mole fraction x = 0.2, the experimentally obtained transition energies are in good agreement with the calculated values.

SPP 2002 Proceedings Cover

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Published

2002-10-23

Issue

2002: Proceedings of the 20th Samahang Pisika ng Pilipinas Physics Congress

Section

Condensed Matter and Plasma Physics

License

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All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Calculation of absorption coefficient of strained MBE-grown InGaAs/GaAs multiple quantum well by transmission spectroscopy”, Proc. SPP, vol. 20, no. 1, pp. SPP–2002, Oct. 2002, Accessed: Mar. 30, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2002-1C-04