Optimum growth conditions for liquid phase epitaxial growth of superconducting Bi2Sr2CaCu2O8+δ thin films
Abstract
Highly c-axis oriented Bi2Sr2CaCu2O8+δ (Bi-2212) thin films were successfully grown on MgO (100) substrates via liquid phase epitaxy from stoichiometric and non-stoichiometric melts under various growth conditions. From the growth temperature and growth time dependence of the % Bi-2212 ratio of the films, the optimum growth conditions for LPE-grown Bi-2212 films were established to be 1000°C for 3 minutes in a stoichiometric melt. The highest critical temperature, Tc, of ≈ 80 K was achieved for the film annealed at the optimum annealing condition of 830°C in air.