Self-assembled epitaxial growth of quantum dots via molecular beam epitaxy

Authors

Armando Somintac National Institute of Physics, University of the Philippines Diliman
Arnita Podpod National Institute of Physics, University of the Philippines Diliman
Elmer Estacio National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

We have grown indium arsenide quantum dots via molecular beam epitaxy in the Stranski-Krastanov mode. In situ RHEED characterization was used to observe the formation of the self-assembled quantum dots, which were grown at substrate temperature of 530°C and indium cell temperature of 630°C. These dots exhibit strong luminescence and narrow size distribution corresponding to ~70meV full width at half maximum. By investigating the effect of vertical alignment of stacked quantum dots, we were able to show that deposition of second quantum dot layer introduces a blue shift in the luminescence peak. This shift is absent for vertically uncoupled samples. Atomic force microscopy measurements revealed the average size of the quantum dots grown at the surface to be 60 Å in height and base diameter of 120 Å.

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Issue

2002: Proceedings of the 20th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2002-1A-04

Section

Plenary Sessions

Published

2002-10-23

How to Cite

[1]

A Somintac, A Podpod, E Estacio, and A Salvador, Self-assembled epitaxial growth of quantum dots via molecular beam epitaxy, Proceedings of the Samahang Pisika ng Pilipinas 20, SPP-2002-1A-04 (2002). URL: https://proceedings.spp-online.org/article/view/SPP-2002-1A-04.