Electron traps in GaAs grown by molecular beam epitaxy on on-axis (100) and off-axis substrates

Authors

  • Raymund Sarmiento Department of Physics, University of San Carlos
  • Armando Somintac National Institute of Physics, University of the Philippines Diliman
  • Luisito Guiao National Institute of Physics, University of the Philippines Diliman
  • Francisco Agra National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Deep level transient spectroscopy (DLTS) was used to characterize the electron traps present in the bulk GaAs grown by molecular beam epitaxy on on-axis (100) and off-axis (4° towards the (111)A direction) substrates. Two electron traps were obtained for each sample having identical corresponding peak locations in the DLTS spectra. The layer grown on the on-axis substrate has electron traps with activation energies of EC = 0.454 eV and EC = 0.643 eV and capture cross-sections of 1.205x10-14 cm2 and 3.88x10-15 cm2, respectively. The layer grown on the off-axis substrate has traps with activation energies of EC = 0.454 eV and EC = 0.723 eV and capture cross-sections of 2.060x10-14 cm2 and 4.40x10-14 cm2. The electron traps are possibly the M4 (or EL3) and EL2 (or EB4) traps commonly found in GaAs layers. Due to the high trap concentrations obtained and to the nonuniform trap concentration profile, As desorption may be considerable during growth.

SPP 2001 Proceedings Cover

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Published

2001-10-24

Issue

2001: Proceedings of the 19th Samahang Pisika ng Pilipinas Philippine Physics Congress

Section

Semiconductor Physics

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How to Cite

[1]
“Electron traps in GaAs grown by molecular beam epitaxy on on-axis (100) and off-axis substrates”, Proc. SPP, vol. 19, no. 1, pp. SPP-2001-W1A-2, Oct. 2001, Accessed: Mar. 30, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2001-W1A-2