Growth of GaAs based VCSEL/RCE structures for optoeleclectronic applications via molecular beam epitaxy

Authors

Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
Elmer Estacio National Institute of Physics, University of the Philippines Diliman
Michelle F. Bailon National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

High intensity and sharp emission peak at light hole (842 nm) and heavy hole (857 nm) excitonic transitions for a 90 Å GaAs quantum well, were observed for a VCSEL structure. Excellent wavelength selectivity and sensitivity was demonstrated by an RCE photodetector at 859 nm corresponding to the energy level of a 95 Å GaAs quantum well.

Issue

2001: Proceedings of the 19th Samahang Pisika ng Pilipinas Philippine Physics Congress

Article ID

SPP-2001-W1A-1

Section

Semiconductor Physics

Published

2001-10-24

How to Cite

[1]

AS Somintac, E Estacio, MF Bailon, and AA Salvador, Growth of GaAs based VCSEL/RCE structures for optoeleclectronic applications via molecular beam epitaxy, Proceedings of the Samahang Pisika ng Pilipinas 19, SPP-2001-W1A-1 (2001). URL: https://proceedings.spp-online.org/article/view/SPP-2001-W1A-1.