Growth of GaAs based VCSEL/RCE structures for optoeleclectronic applications via molecular beam epitaxy

Authors

  • Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Michelle F. Bailon ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

High intensity and sharp emission peak at light hole (842 nm) and heavy hole (857 nm) excitonic transitions for a 90 Ã… GaAs quantum well, were observed for a VCSEL structure. Excellent wavelength selectivity and sensitivity was demonstrated by an RCE photodetector at 859 nm corresponding to the energy  level of a 95 Ã… GaAs quantum well.

SPP 2001 Proceedings Cover

Published

2001-10-24

Issue

2001: Proceedings of the 19th Samahang Pisika ng Pilipinas Philippine Physics Congress

Section

Semiconductor Physics

License

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How to Cite

[1]
“Growth of GaAs based VCSEL/RCE structures for optoeleclectronic applications via molecular beam epitaxy”, Proc. SPP, vol. 19, no. 1, pp. SPP-2001-W1A-1, Oct. 2001, Accessed: Apr. 07, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2001-W1A-1