Growth of GaAs based VCSEL/RCE structures for optoeleclectronic applications via molecular beam epitaxy

Authors

  • Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Michelle F. Bailon ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

High intensity and sharp emission peak at light hole (842 nm) and heavy hole (857 nm) excitonic transitions for a 90 Å GaAs quantum well, were observed for a VCSEL structure. Excellent wavelength selectivity and sensitivity was demonstrated by an RCE photodetector at 859 nm corresponding to the energy  level of a 95 Å GaAs quantum well.

SPP 2001 Proceedings Cover

Published

2001-10-24

Issue

2001: Proceedings of the 19th Samahang Pisika ng Pilipinas Philippine Physics Congress

Section

Semiconductor Physics

Copyright Information

© 2001 Armando S. Somintac, Elmer Estacio, Michelle F. Bailon, Arnel A. Salvador
Copyright License Agreement for Full Articles

How to Cite

[1]
AS Somintac, E Estacio, MF Bailon, and AA Salvador, Growth of GaAs based VCSEL/RCE structures for optoeleclectronic applications via molecular beam epitaxy, in Proceedings of the 19th Samahang Pisika ng Pilipinas Philippine Physics Congress (Philippines, 2001), SPP-2001-W1A-1. URL: https://proceedings.spp-online.org/article/view/SPP-2001-W1A-1
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