Growth of GaAs based VCSEL/RCE structures for optoeleclectronic applications via molecular beam epitaxy

Authors

Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michelle F. Bailon ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

High intensity and sharp emission peak at light hole (842 nm) and heavy hole (857 nm) excitonic transitions for a 90 Å GaAs quantum well, were observed for a VCSEL structure. Excellent wavelength selectivity and sensitivity was demonstrated by an RCE photodetector at 859 nm corresponding to the energy level of a 95 Å GaAs quantum well.

Issue

2001: Proceedings of the 19th Samahang Pisika ng Pilipinas Philippine Physics Congress

Scaling new heights in physics and physics education
24-26 October 2001, Saint Mary's University, Nueva Vizcaya

Article ID

SPP-2001-W1A-1

Section

Semiconductor Physics

Published

2001-10-24

How to Cite

[1]

AS Somintac, E Estacio, MF Bailon, and AA Salvador, Growth of GaAs based VCSEL/RCE structures for optoeleclectronic applications via molecular beam epitaxy, Proceedings of the Samahang Pisika ng Pilipinas 19, SPP-2001-W1A-1 (2001). URL: https://proceedings.spp-online.org/article/view/SPP-2001-W1A-1.