Observation of the quantum-confined Stark effect in a GaAs/AlGaAs p-i-n diode by room temperature photocurrent spectroscopy

Authors

  • Christine S. Ison National Institute of Physics, University of the Philippines Diliman
  • Elmer S. Estacio National Institute of Physics, University of the Philippines Diliman
  • Michelle F. Bailon National Institute of Physics, University of the Philippines Diliman
  • Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Room temperature photocurrent spectroscopy is performed on an MBE-grown GaAs/AlGaAs multiple quantum well (MQW) p-i-n device. An observed shift to longer wavelengths is seen with increasing reverse bias voltages. This behavior is explained through a mechanism called the quantum-confined Stark effect. Applied electric fields are estimated using second-order correction for infinite quantum wells. The estimated built-in electric field is 20kV/cm corresponding to a 9 meV shift from the flatband energy transition. An observed shift to shorter wavelengths is seen under an optically applied field for both biased and unbiased conditions.

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Issue

Article ID

SPP-2001-H2C-3

Section

Semiconductor Physics

Published

2001-10-24

How to Cite

[1]
CS Ison, ES Estacio, MF Bailon, AS Somintac, and AA Salvador, Observation of the quantum-confined Stark effect in a GaAs/AlGaAs p-i-n diode by room temperature photocurrent spectroscopy, Proceedings of the Samahang Pisika ng Pilipinas 19, SPP-2001-H2C-3 (2001). URL: https://proceedings.spp-online.org/article/view/SPP-2001-H2C-3.