Observation of the quantum-confined Stark effect in a GaAs/AlGaAs p-i-n diode by room temperature photocurrent spectroscopy

Authors

Christine S. Ison ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer S. Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michelle F. Bailon ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Room temperature photocurrent spectroscopy is performed on an MBE-grown GaAs/AlGaAs multiple quantum well (MQW) p-i-n device. An observed shift to longer wavelengths is seen with increasing reverse bias voltages. This behavior is explained through a mechanism called the quantum-confined Stark effect. Applied electric fields are estimated using second-order correction for infinite quantum wells. The estimated built-in electric field is 20kV/cm corresponding to a 9 meV shift from the flatband energy transition. An observed shift to shorter wavelengths is seen under an optically applied field for both biased and unbiased conditions.

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Published

2001-10-24

Issue

2001: Proceedings of the 19th Samahang Pisika ng Pilipinas Philippine Physics Congress

Section

Semiconductor Physics

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How to Cite

[1]

“Observation of the quantum-confined Stark effect in a GaAs/AlGaAs p-i-n diode by room temperature photocurrent spectroscopy”, Proc. SPP, vol. 19, no. 1, pp. SPP-2001-H2C-3, Oct. 2001, Accessed: Apr. 07, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2001-H2C-3