Investigation on the electron mobility of modulation-doped GaAs/AlGaAs heterostructures
Abstract
We present results on theoretical calculations on the mobility of two-dimensional electron gas (2DEG) in modulation doped GaAs/AlGaAs heterostructures. Limiting scattering mechanisms have been determined by comparing theoretical curves with the experimental temperature-mobility plots. Calculated electron mobilities are observed to be in very good agreement with experimental data points. Ionized impurity scattering is seen to dominate below 30K, acoustic phonon scattering in the intermediate temperature regime, and optical polar scattering at high temperatures (>180K). Understanding the extent of contribution of various scattering mechanisms may help us achieve better quality modulation-doped heterostructures (MDH) suitable for high-speed device applications.
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