Electronic properties of Ppy/n-Si heterojunctions fabricated using a three-electrode cell

Authors

  • Celia Banaag Physics Department, De La Salle University
  • Ofelia Rempillo Physics Department, De La Salle University
  • Maria Carla Manzano Physics Department, De La Salle University
  • Reuben Quiroga Physics Department, De La Salle University
  • Enrique Manzano Electronics and Communications Engineering Department, De La Salle University

Abstract

Heterojunctions of p-type polypyrrole (Ppy) and n-type silicon (n-Si) were fabricated by electrochemical deposition of Ppy on n-Si using a three-electrode cell. The junctions exhibit rectifying behavior based on their I-V characteristics. The output signals show a rectified wave characteristic of a diode and their ln I vs. V graphs are linear, consistent with the ideal diode equation. Calculated barrier heights range from 0.562 to 0.698 eV and calculated reverse saturation currents range from 20.8 to 62.5 μA. The junctions formed were relatively stable in air; their I-V characteristics show very minimal change with increasing exposure to air at room temperature. Hysteresis observed in some of the I-V characteristics of the junctions is due mainly to poor contact between Ppy film and connecting wire. Polypyrrole films deposited on n-Si wafer have thickness ranging from 2.1 μm to 54.0 μm. Film thickness was found to increase with increasing synthesis time.

SPP 2001 Proceedings Cover

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Published

2001-10-24

Issue

2001: Proceedings of the 19th Samahang Pisika ng Pilipinas Philippine Physics Congress

Section

Semiconductor Physics

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All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Electronic properties of Ppy/n-Si heterojunctions fabricated using a three-electrode cell”, Proc. SPP, vol. 19, no. 1, pp. SPP-2001-H2C-1, Oct. 2001, Accessed: Mar. 31, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2001-H2C-1