Time-resolved photocurrent spectroscopy of an LPE-grown GaAs/AlGaAs heterojunction device

Authors

Christine Ison ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jean Laniog ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

GaAs-based devices have recently found widespread telecommunications. Being a direct band-gap semiconductor, GaAs boasts of better efficiency and faster carrier recombination rates than it's more popular indirect-gap silicon counterpart. GaAs LEDs, lasers, and photodetectors are the common choice used in fiberoptic communications. Discrete components such as high-electron mobility transistors (HEMT) used in satellite communication are now fabricated using GaAs-based devices. The Condensed Matter Physics Laboratory of the National Institute of Physics, UP Diliman has recently been successful in growing a GaAs/AlGaAs pn heterojunction by Liquid Phase Epitaxy (LPE). In this paper, the authors present results on the study of the optoelectronic characteristics of this device by photocurrent (PC) spectroscopy. Direct pump-and-probe methods were also employed to measure the transient response of the PC signal of the GaAs/AlGaAs pn junction.

Downloads

Issue

2000: Proceedings of the 18th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2000-SP-11

Section

Optics and Spectroscopy

Published

2000-10-27

How to Cite

[1]

C Ison, E Estacio, J Laniog, and A Salvador, Time-resolved photocurrent spectroscopy of an LPE-grown GaAs/AlGaAs heterojunction device, Proceedings of the Samahang Pisika ng Pilipinas 18, SPP-2000-SP-11 (2000). URL: https://proceedings.spp-online.org/article/view/SPP-2000-SP-11.