Electrical and optical characterization of AlxGa1-xAs/GaAs p-n junctions grown via liquid phase epitaxy

Authors

  • Jean N. Laniog National Institute of Physics, University of the Philippines Diliman
  • Kristin Maria Angelus N. Bautista National Institute of Physics, University of the Philippines Diliman
  • Michelee G. Patricio National Institute of Physics, University of the Philippines Diliman
  • Elmer S. Estacio National Institute of Physics, University of the Philippines Diliman
  • Roland V. Sarmago National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

The AlxGa1-xAs/GaAs heterostructure system is of prime importance for use in high-speed digital and electro-optic device applications. The compositional dependence of the bandgap energy of AlxGa1-xAs can be tailored to meet specific device requirements such as photon emission and detection. The 0.15% lattice parameter difference between GaAs and AlxGa1-xAs (0 ≤ x ≤ 1.0) at 300 K ensures that the density of interface states is kept to a level that would not affect device performance. These two properties of AlxGa1-xAs/GaAs alloy system make it one of the most technologically important semiconductors to date.
Epitaxial layers of III-V semiconductors have well-controlled carrier recombination and transport properties, usually derived from the addition of particular dopants. Among the n-type dopants, tin (Sn) is attractive for n-type doping because of its low volatility and relatively low distribution coefficient. This characteristic is crucial to minimizing dopant losses during epitaxy. Zinc (Zn), on the other hand, is preferred for doping for doping of bulk GaAs due to its high doping efficiency and uniformity. Moreover, Zn acceptors exhibit high electrical activity and show no evidence of autocompensation. In this work, therefore, Sn and Zn were used as the n- and p-type impurities respectively.
This study aimed to fabricate AlxGa1-xAs/GaAs p-n junctions using the liquid phase epitaxy (LPE) technique. The growth parameters of the samples were correlated with their structural, electrical and optical properties.

SPP 2000 Proceedings Cover

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Published

2000-10-27

Issue

2000: Proceedings of the 18th Samahang Pisika ng Pilipinas Physics Congress

Section

Materials Science

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All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Electrical and optical characterization of AlxGa1-xAs/GaAs p-n junctions grown via liquid phase epitaxy”, Proc. SPP, vol. 18, no. 1, p. SPP-2000-MS-02, Oct. 2000, Accessed: Mar. 25, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2000-MS-02