Liquid phase epitaxy of Sn-doped GaAs

Authors

Jean N. Laniog ⋅ PH National Institute of Physics, University of the Philippines Diliman
Kristin Maria Angelus N. Bautista ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michelee Patricio G. Patricio ⋅ PH National Institute of Physics, University of the Philippines Diliman
Roland V. Sarmago ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Semiconductor devices, in particular p-n junctions are realized by successive deposition of p-Al_xGa_1-xAs and n-GaAs on undoped GaAs substrates. In order to fabricate p-n junctions that exhibit good electrical and optical qualities, optimization of the growth parameters and melt composition to obtain the desired net carrier concentration in the grown p-type and n-type layers is necessary.
Among the n-type dopants, tin (Sn) exhibits the lowest volatility as deduced from the fact that it only exerts a pressure of 760 mmHg at a temperature of 2270°C. This minimizes problems regarding the loss of the dopant during epitaxial growth. Hence, Sn is very attractive for n-type doping in LPE grown GaAs and Al_xGa_1-xAs.
This paper reports on the structural and electrical properties of Sn-doped GaAs with specific emphasis on their dependence on the atomic fraction of Sn in the melt.

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Issue

2000: Proceedings of the 18th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2000-CM-12

Section

Condensed Matter Physics and Materials Science

Published

2000-10-27

How to Cite

[1]

JN Laniog, KMAN Bautista, MPG Patricio, RV Sarmago, and AA Salvador, Liquid phase epitaxy of Sn-doped GaAs, Proceedings of the Samahang Pisika ng Pilipinas 18, SPP-2000-CM-12 (2000). URL: https://proceedings.spp-online.org/article/view/SPP-2000-CM-12.