Liquid phase epitaxy of Sn-doped GaAs

Authors

Jean N. Laniog National Institute of Physics, University of the Philippines Diliman
Kristin Maria Angelus N. Bautista National Institute of Physics, University of the Philippines Diliman
Michelee Patricio G. Patricio National Institute of Physics, University of the Philippines Diliman
Roland V. Sarmago National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Semiconductor devices, in particular p-n junctions are realized by successive deposition of p-Al_xGa_1-xAs and n-GaAs on undoped GaAs substrates. In order to fabricate p-n junctions that exhibit good electrical and optical qualities, optimization of the growth parameters and melt composition to obtain the desired net carrier concentration in the grown p-type and n-type layers is necessary.
Among the n-type dopants, tin (Sn) exhibits the lowest volatility as deduced from the fact that it only exerts a pressure of 760 mmHg at a temperature of 2270°C. This minimizes problems regarding the loss of the dopant during epitaxial growth. Hence, Sn is very attractive for n-type doping in LPE grown GaAs and Al_xGa_1-xAs.
This paper reports on the structural and electrical properties of Sn-doped GaAs with specific emphasis on their dependence on the atomic fraction of Sn in the melt.

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Issue

2000: Proceedings of the 18th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2000-CM-12

Section

Condensed Matter Physics and Materials Science

Published

2000-10-27

How to Cite

[1]

JN Laniog, KMAN Bautista, MPG Patricio, RV Sarmago, and AA Salvador, Liquid phase epitaxy of Sn-doped GaAs, Proceedings of the Samahang Pisika ng Pilipinas 18, SPP-2000-CM-12 (2000). URL: https://proceedings.spp-online.org/article/view/SPP-2000-CM-12.