Measurement of junction electric field in an MBE-grown modulation-doped GaAs/AlGaAs heterostructure by photoreflectance spectroscopy

Authors

  • Elmer Estacio National Institute of Physics, University of the Philippines Diliman
  • Michelle Bailon National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

GaAs/AlGaAs modulation-doped heterostructures have recently been increasingly used in integrated circuits for the wireless communication industry, mainly for their high-speed capabilities. These high-quality heterostructures have been realized by molecular beam epitaxy (MBE). The Condensed Matter Physics Laboratory has recently been successful in growing GaAs/AlGAs modulation-doped heterostructures via MBE. In characterizing these samples, the photoreflectance (PR) technique has been used extensively in recent years to study modulation-doped structures. The PR spectrum includes the Franz-Keldysh Oscillations (FKOs) in the neighborhood of the GaAs and the AlGaAs band edge energies. From the analysis of these FKOs it is possible to measure the built-in electric field in the GaAs (acceptor) and AlGaAs (donor) regions. The authors have previously used the analysis of FKOs to calculate the surface electric field in a bulk GaAs layer using PR spectroscopy. In this paper, we demonstrate the investigation of our MBE-grown modulation-doped heterojunction; exploiting PR's sensitivity, ease-of-use and reliability even at room temperature measurements.

SPP 2000 Proceedings Cover

Downloads

Published

2000-10-27

Issue

2000: Proceedings of the 18th Samahang Pisika ng Pilipinas Physics Congress

Section

Condensed Matter Physics and Materials Science

License

By submitting their manuscript to the Samahang Pisika ng Pilipinas (SPP) for consideration, the Authors warrant that their work is original, does not infringe on existing copyrights, and is not under active consideration for publication elsewhere.
Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Measurement of junction electric field in an MBE-grown modulation-doped GaAs/AlGaAs heterostructure by photoreflectance spectroscopy”, Proc. SPP, vol. 18, no. 1, p. SPP-2000-CM-03, Oct. 2000, Accessed: Mar. 31, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2000-CM-03