Measurement of surface electric field of GaAs (001) by photoreflectance spectroscopy

Authors

Elmer Estacio National Institute of Physics, University of the Philippines Diliman
Michelle Bailon National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Photoreflectance (PR) spectroscopy is a quick and non invasive method that can be used to determine the pertinent material properties of III-V semiconductor films. Among the parameters that can be obtained using this technique are alloy composition, quantum well width and surface electric field. The carrier concentration of films in turn is related to the surface electric field. While Hall measurements are more accurate in determining carrier concentration, more extensive sample preparations are needed. In this paper, we show how PR spectroscopy can be used to estimate the carrier concentration of n type GaAs films.

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Issue

1999: Proceedings of the 17th National Physics Congress of the Samahang Pisika ng Pilipinas

Article ID

SPP-1999-SP-10

Section

Spectroscopy and Interferometry

Published

1999-10-22

How to Cite

[1]

E Estacio, M Bailon, A Somintac, and A Salvador, Measurement of surface electric field of GaAs (001) by photoreflectance spectroscopy, Proceedings of the Samahang Pisika ng Pilipinas 17, SPP-1999-SP-10 (1999). URL: https://proceedings.spp-online.org/article/view/SPP-1999-SP-10.