Measurement of surface electric field of GaAs (001) by photoreflectance spectroscopy
Abstract
Photoreflectance (PR) spectroscopy is a quick and non invasive method that can be used to determine the pertinent material properties of III-V semiconductor films. Among the parameters that can be obtained using this technique are alloy composition, quantum well width and surface electric field. The carrier concentration of films in turn is related to the surface electric field. While Hall measurements are more accurate in determining carrier concentration, more extensive sample preparations are needed. In this paper, we show how PR spectroscopy can be used to estimate the carrier concentration of n type GaAs films.
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