Fabrication of Cd_1-xZn_xTe thin films

Authors

Gilbert Diwa Physics Department, De La Salle University
Gil Nonato C. Santos Physics Department, De La Salle University
Reuben V. Quiroga Physics Department, De La Salle University

Abstract

Cadmium Zinc Telluride (CZT) is a wide-band gap semiconductor material that is primarily used as a substrate in Mercury-Cadmium-Telluride (MCT) epitaxial layers. Aside from the above application, this material can be used as solar cell and its tunable energy gap (1.7eV to 2.5eV) makes it very suitable in opto-electronic devices. CZT crystallizes in zincblende cubic structure and it is prepared in various techniques such as molecular beam epitaxy (MBE), metalorganic vapor phase epitaxy (MOVPE), and double-well temperature-gradient vapor transport deposition (DWTGVTD).
In this study, the method of horizontal unseeded vapor phase growth (HUVG) will be utilized to grow CZT crystals rather than the Bridgman technique. CZT crystals prepared using the HUVG technique can be adapted to other semiconductor materials. Thermal evaporation using the Thermionics High Vacuum System will be used to fabricate the CZT films rather than the above mentioned techniques.

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Issue

1999: Proceedings of the 17th National Physics Congress of the Samahang Pisika ng Pilipinas

Article ID

SPP-1999-MS-08

Section

Materials Science

Published

1999-10-22

How to Cite

[1]

G Diwa, GNC Santos, and RV Quiroga, Fabrication of Cd1-xZnxTe thin films, Proceedings of the Samahang Pisika ng Pilipinas 17, SPP-1999-MS-08 (1999). URL: https://proceedings.spp-online.org/article/view/SPP-1999-MS-08.