Silicon nitride deposited by PECVD

Authors

Erwin Victor R. Cruz ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnita Podpod ⋅ PH National Institute of Physics, University of the Philippines Diliman
Roland V. Sarmago ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Alberto V. Amorsolo, Jr. ⋅ PH Department of Mining, Metallurgical and Materials Engineering, University of the Philippines Diliman

Abstract

With the Philippines embarking into semiconductor device research, a lot of research activities are focused on materials that are used for semiconductor device fabrication. Being one of the most frequently used thin film materials in device fabrication, silicon nitride merits attention. Silicon nitride is widely used as a passivation coating, mask and gate dielectric in semiconductor device fabrication as well as an anti-reflection coating (ARC) in photovoltaic cells. Silicon nitride deposited by PECVD, often called as PECVD-nitride or SiNx, is the material of choice for the final passivation of semiconductor devices due to its low deposition temperature and good physical and chemical properties. Due to its importance, it is imperative to obtain the capability of producing high quality PECVD-nitride films.
The use of PECVD-nitride in different components of semiconductor devices imposes different requirements on its properties. In relation, the characteristics of PECVD-nitride films are strongly dependent on the deposition conditions. Therefore, it is possible to control the deposition process inorder to deposit films that will be suitable for its intended purpose. In this paper, we report the characteristics of the PECVD-nitride films under various deposition conditions.

Downloads

Issue

1999: Proceedings of the 17th National Physics Congress of the Samahang Pisika ng Pilipinas

Article ID

SPP-1999-MS-03

Section

Materials Science

Published

1999-10-22

How to Cite

[1]

EVR Cruz, A Podpod, RV Sarmago, AA Salvador, and AV Amorsolo, Silicon nitride deposited by PECVD, Proceedings of the Samahang Pisika ng Pilipinas 17, SPP-1999-MS-03 (1999). URL: https://proceedings.spp-online.org/article/view/SPP-1999-MS-03.