Silicon nitride deposited by PECVD

Authors

  • Erwin Victor R. Cruz National Institute of Physics, University of the Philippines Diliman
  • Arnita Podpod National Institute of Physics, University of the Philippines Diliman
  • Roland V. Sarmago National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman
  • Alberto V. Amorsolo, Jr. Department of Mining, Metallurgical and Materials Engineering, University of the Philippines Diliman

Abstract

With the Philippines embarking into semiconductor device research, a lot of research activities are focused on materials that are used for semiconductor device fabrication. Being one of the most frequently used thin film materials in device fabrication, silicon nitride merits attention. Silicon nitride is widely used as a passivation coating, mask and gate dielectric in semiconductor device fabrication as well as an anti-reflection coating (ARC) in photovoltaic cells. Silicon nitride deposited by PECVD, often called as PECVD-nitride or SiNx, is the material of choice for the final passivation of semiconductor devices due to its low deposition temperature and good physical and chemical properties. Due to its importance, it is imperative to obtain the capability of producing high quality PECVD-nitride films.
The use of PECVD-nitride in different components of semiconductor devices imposes different requirements on its properties. In relation, the characteristics of PECVD-nitride films are strongly dependent on the deposition conditions. Therefore, it is possible to control the deposition process inorder to deposit films that will be suitable for its intended purpose. In this paper, we report the characteristics of the PECVD-nitride films under various deposition conditions.

SPP 1999 Proceedings Cover

Downloads

Published

1999-10-22

Issue

1999: Proceedings of the 17th National Physics Congress of the Samahang Pisika ng Pilipinas

Section

Materials Science

License

By submitting their manuscript to the Samahang Pisika ng Pilipinas (SPP) for consideration, the Authors warrant that their work is original, does not infringe on existing copyrights, and is not under active consideration for publication elsewhere.
Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Silicon nitride deposited by PECVD”, Proc. SPP, vol. 17, no. 1, p. SPP-1999-MS-03, Oct. 1999, Accessed: Mar. 31, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-1999-MS-03