Structural and electrical properties of LPE GaAs

Authors

Jean N. Laniog National Institute of Physics, University of the Philippines Diliman
Kristin Maria Angelus Bautista National Institute of Physics, University of the Philippines Diliman
Michelee G. Patricio National Institute of Physics, University of the Philippines Diliman
Roland V. Sarmago National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

We have successfully obtained the optimum growth parameters for the homoepitaxy of GaAs using the Liquid Phase Epitaxy (LPE) technique. This is part of an on going project aimed at fabricating GaAs-based devices.
This work investigated the growth of GaAs by LPE with specific emphasis on the growth temperature and growth mode (isothermal or ramp cooling) in relation to the electrical, structural and optical properties of the grown films. Initial results of the heteroepitaxy of Al_xGa_1-xAs on GaAs substrates are also presented.

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Issue

1999: Proceedings of the 17th National Physics Congress of the Samahang Pisika ng Pilipinas

Article ID

SPP-1999-CM-06

Section

Condensed Matter Physics

Published

1999-10-22

How to Cite

[1]

JN Laniog, KMA Bautista, MG Patricio, RV Sarmago, and AA Salvador, Structural and electrical properties of LPE GaAs, Proceedings of the Samahang Pisika ng Pilipinas 17, SPP-1999-CM-06 (1999). URL: https://proceedings.spp-online.org/article/view/SPP-1999-CM-06.