Structural and electrical properties of LPE GaAs
Abstract
We have successfully obtained the optimum growth parameters for the homoepitaxy of GaAs using the Liquid Phase Epitaxy (LPE) technique. This is part of an on going project aimed at fabricating GaAs-based devices.
This work investigated the growth of GaAs by LPE with specific emphasis on the growth temperature and growth mode (isothermal or ramp cooling) in relation to the electrical, structural and optical properties of the grown films. Initial results of the heteroepitaxy of AlxGa1-xAs on GaAs substrates are also presented.
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