Zr negative ion beam production in a plasma-sputter-type negative ion source

Abstract

Previously, Ramos, et al., created a plasma-sputter-type negative ion source in a multicusp geometry, similar to the ion source developed by Alton, et al., useful for plasma beam applications. The sputter ion source was intended for TiN thin film deposition via ion beam deposition. Their preliminary experiments determined the optimum conditions for producing Ti^– ions as a source for ion beam deposition of TiN.
In this study, the same plasma-sputter-type negative ion source was utilized but with a different target material, Zirconium. Zirconium was chosen because upon proper nitriding of this material, it produces a coating that is remarkably hard and wear-resistant. It has been shown in previous reports that ZrN coated tools last from 200 to 1000% longer than uncoated tools and up to 500% longer than TiN coated materials.
Ion beam deposition of ZrN was insisted because of some problems presented by present coating techniques such as CVD, PVD, sputtering and Ion Plating. The deposited films often exhibit poor adhesion to the substrate. Most reports show that high quality films (good adhesion, low impurities) were achieved using ion beam-assisted deposition.
To be able to start producing ZrN flms via ion beam deposition, proper characterization of the ion source must be required. Different plasma conditions were generated and the corresponding Zr^– ion production was analyzed to be able to obtain the conditions for maximum Zr^– ion production.