Unseeded vapor deposition of polycrystalline Pb1−xSnxTe

Abstract

The pseudobinary compound semiconductor Pb_1−xSn_xTe has been the object of considerable interest in the past few years because of its interesting photoelectric, photoconducting, optical and semiconducting properties that make it a good material for electro-optical devices, multicolor sensors and IR detectors. Interest in this narrow gap semiconductor stems mainly from its suitability as a material for infrared detection in the 5−15 μm range, and tunable laser diodes in the 6.5−32 μm range. These applications arise from a variable energy gap, depending on the value of the relative composition x. ln this paper, the crystal structure and electronic transport properties of Pb_1−xSn_xTe were investigated.