Unseeded vapor deposition of polycrystalline Pb_1−xSn_xTe

Authors

Gil Nonato C. Santos ⋅ PH Physics Department, De La Salle University
Reuben Quiroga ⋅ PH Physics Department, De La Salle University
Jose Omar Amistoso ⋅ PH National Institute of Physics, University of the Philippines Diliman
Anthony Montecillo ⋅ PH National Institute of Physics, University of the Philippines Diliman
Roland V. Sarmago ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

The pseudobinary compound semiconductor Pb_1−xSn_xTe has been the object of considerable interest in the past few years because of its interesting photoelectric, photoconducting, optical and semiconducting properties that make it a good material for electro-optical devices, multicolor sensors and IR detectors. Interest in this narrow gap semiconductor stems mainly from its suitability as a material for infrared detection in the 5−15 μm range, and tunable laser diodes in the 6.5−32 μm range. These applications arise from a variable energy gap, depending on the value of the relative composition x. ln this paper, the crystal structure and electronic transport properties of Pb_1−xSn_xTe were investigated.

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Issue

1997: Proceedings of the 15th National Physics Congress of the Samahang Pisika ng Pilipinas

Article ID

SPP-1997-CM-07

Section

Condensed Matter Physics and Materials Science

Published

1997-10-27

How to Cite

[1]

GNC Santos, R Quiroga, JO Amistoso, A Montecillo, and RV Sarmago, Unseeded vapor deposition of polycrystalline Pb1−xSnxTe, Proceedings of the Samahang Pisika ng Pilipinas 15, SPP-1997-CM-07 (1997). URL: https://proceedings.spp-online.org/article/view/SPP-1997-CM-07.