Surface states on InP

Authors

Terencio D. Lacuesta Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños
Stephen M. Thurgate School of Physical Sciences, Engineering and Technology, Murdoch University, Australia

Abstract

The presence of surface states within the bandgap of InP was observed directly using the technique of Surface Photovoltage Spectroscopy (SPV). Two states were observed at 0.25 eV and 0.55 eV below the CBM. The 0.25 eV state is found to be the donor state while the second (0.55 eV) state is an acceptor state. These two states satisfactorily explain the SPV spectra and correlates well with the band bending and Fermi level measurements reported by others on both the n- and p-type InP. The 0.25 eV state appears to be due to a defect while the 0.55 eV state is associated with the formation of indium oxide.

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Issue

1996: Proceedings of the 14th National Physics Congress of the Samahang Pisika ng Pilipinas

Article ID

SPP-1996-CM-11

Section

Condensed Matter Physics, Superconductivity and Materials Physics

Published

1996-12-06

How to Cite

[1]

TD Lacuesta and SM Thurgate, Surface states on InP, Proceedings of the Samahang Pisika ng Pilipinas 14, SPP-1996-CM-11 (1996). URL: https://proceedings.spp-online.org/article/view/SPP-1996-CM-11.