Growth of Bismuth 2201 LPE films by dipping without substrate rotation

Authors

Roland V. Sarmago National Institute of Physics, University of the Philippines Diliman
Michelle Bailon National Institute of Physics, University of the Philippines Diliman
Alipio T. Garcia National Institute of Physics, University of the Philippines Diliman

Abstract

Growth of LPE films usually involves substrate rotation to moderate the melt/interface growth kinetics. This method works very well for growth of magnetic materials by LPE and thus adopted subsequently for superconductors. In practice the greater the difference between growth rotation and the extraction rotation, the more difficult the process. Also slow rotations, which are often needed in LPE growth, are more difficult to control. Here we report the growth of Bi 2201 thin films by LPE without substrate rotation.

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Issue

1994: Proceedings of the 12th National Physics Congress of the Samahang Pisika ng Pilipinas

Article ID

SPP-1994-CM-07

Section

Condensed Matter Physics, Superconductivity and Materials Physics

Published

1994-10-15

How to Cite

[1]

RV Sarmago, M Bailon, and AT Garcia, Growth of Bismuth 2201 LPE films by dipping without substrate rotation, Proceedings of the Samahang Pisika ng Pilipinas 12, SPP-1994-CM-07 (1994). URL: https://proceedings.spp-online.org/article/view/SPP-1994-CM-07.