Gain measurements in GaInAsP/AlGaAs semiconductor laser with ridge-waveguide structure

Authors

  • Linda S. Posadas ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Te-Ho Chong ⋅ JP Department of Electrical and Electronics Engineering, Sophia University
  • Katsumi Kishino ⋅ JP Department of Electrical and Electronics Engineering, Sophia University

Abstract

Gain characteristics of GalnAsP/AlGaAs lasers with ridge-waveguide structure emitting in the 600 nm band are measured using the Hakki-Paoli method. From the gain vs. current curve, the gain constant β and the current density at transparency J0 are estimated. The values obtained are 1.3 x 10-2 cm-μm/A and 14.3 kA/nm2- Î¼m, respectively. Results obtained by other researchers for the same physical quantities for GalnAsP and other materials are cited for comparison purposes.

SPP 1989 Proceedings cover

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Published

1989-07-01

Issue

1989: Proceedings of the Eighth Samahang Pisika ng Pilipinas National Physics Congress

Section

Laser Physics

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How to Cite

[1]
“Gain measurements in GaInAsP/AlGaAs semiconductor laser with ridge-waveguide structure”, Proc. SPP, vol. 8, no. 1, p. SPP-1989-LP-08, Jul. 1989, Accessed: Apr. 01, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-1989-LP-08