Gain measurements in GaInAsP/AlGaAs semiconductor laser with ridge-waveguide structure

Authors

Linda S. Posadas ⋅ PH National Institute of Physics, University of the Philippines Diliman
Te-Ho Chong ⋅ JP Department of Electrical and Electronics Engineering, Sophia University
Katsumi Kishino ⋅ JP Department of Electrical and Electronics Engineering, Sophia University

Abstract

Gain characteristics of GalnAsP/AlGaAs lasers with ridge-waveguide structure emitting in the 600 nm band are measured using the Hakki-Paoli method. From the gain vs. current curve, the gain constant β and the current density at transparency J₀ are estimated. The values obtained are 1.3 x 10^-2 cm-μm/A and 14.3 kA/nm²- μm, respectively. Results obtained by other researchers for the same physical quantities for GalnAsP and other materials are cited for comparison purposes.

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Issue

1989: Proceedings of the Eighth Samahang Pisika ng Pilipinas National Physics Congress

Article ID

SPP-1989-LP-08

Section

Laser Physics

Published

1989-07-01

How to Cite

[1]

LS Posadas, T-H Chong, and K Kishino, Gain measurements in GaInAsP/AlGaAs semiconductor laser with ridge-waveguide structure, Proceedings of the Samahang Pisika ng Pilipinas 8, SPP-1989-LP-08 (1989). URL: https://proceedings.spp-online.org/article/view/SPP-1989-LP-08.