Measurement of carrier concentration in gallium arsenide/zinc oxide (GaAs/ZnO) heterojunction by simulation of energy band diagram using full depletion approximation

Authors

Erick John Carlo D. Solibet National Institute of Physics, University of the Philippines Diliman
Renebeth B. Payod Physics Department, De La Salle University
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
Elmer S. Estacio National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Energy band diagram of n-GaAs/ZnO heterojunction was simulated using full depletion approximation to calculate the carrier concentration of ZnO. The calculated depletion region width was 172.5 nm and the calculated electric field was 179.7 kV/cm for carrier concentrations of 1x10¹⁶ cm⁻³ and 1x10¹⁷ cm⁻³ of GaAs and ZnO, respectively. Increasing carrier concentration was observed to decrease the width of the depletion region and increase the total electric field at the interface. The calculated carrier concentration from the electric field obtained from the photo reflectance spectra of n-GaAs/AZO was of the same magnitude as the measured concentration using Van der Pauw method.

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Issue

2016: Proceedings of the 34th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2016-PB-09

Section

Poster Session PB

Published

2016-08-18

How to Cite

[1]

EJCD Solibet, RB Payod, AS Somintac, ES Estacio, and AA Salvador, Measurement of carrier concentration in gallium arsenide/zinc oxide (GaAs/ZnO) heterojunction by simulation of energy band diagram using full depletion approximation, Proceedings of the Samahang Pisika ng Pilipinas 34, SPP-2016-PB-09 (2016). URL: https://proceedings.spp-online.org/article/view/SPP-2016-PB-09.