k·p Perturbation Model of the Three-terminal Ferromagnet-Insulator-Semiconductor Device with Spin-Orbit Interaction

Authors

  • April Cortez National Institute of Physics, University of the Philippines Diliman
  • Cristine Villagonzalo National Institute of Physics, University of the Philippines Diliman

Abstract

Although the creation of spin polarization in semiconductors in a three-terminal ferromagnet-insulator-normal conductor (3T-FIN) proved successful experimentally, the behavior of spin carriers are not yet well understood. Here we develop a model based on the k·p perturbation theory to provide an insight to the energy behavior of spin carriers in the semiconductor. A potential barrier and with a half-harmonic oscillator model was utilized. It was established that for the model potential, the spin-orbit interaction does not contribute to the additional energy in the 3T-FIN device for both polarized and unpolarized input.

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Issue

Article ID

SPP-2016-PA-17

Section

Poster Session PA

Published

2016-08-18

How to Cite

[1]
A Cortez and C Villagonzalo, k·p Perturbation Model of the Three-terminal Ferromagnet-Insulator-Semiconductor Device with Spin-Orbit Interaction, Proceedings of the Samahang Pisika ng Pilipinas 34, SPP-2016-PA-17 (2016). URL: https://proceedings.spp-online.org/article/view/SPP-2016-PA-17.