Fabrication and characterization of free-standing porous silicon

Authors

  • Lorenzo Lopez Department of Physical Science, Polytechnic University of the Philippines, Sta. Mesa, Manila
  • K.M. Supnet Department of Physical Science, Polytechnic University of the Philippines Sta. Mesa
  • A.I. Mabilangan National Institute of Physics, University of the Philippines Diliman
  • N.G.E. Saplagio National Institute of Physics, University of the Philippines Diliman
  • Rogelio Dizon Department of Physical Science, Polytechnic University of the Philippines Sta. Mesa
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

Free-standing porous silicon (FS PSi) layers were fabricated from 2x2cmp-type silicon (100) wafers through electrochemical etching in ethanol-hydrofluoric acid solution. Currents of 15mA, 40mA and 120mA were used for anodization for 100 minutes. An abrupt increase to 250mA after the time interval showed successful liftoff of porous silicon from the silicon substrate creating FS PSi. Transmission spectra of free-standing samples showed a maximum of 40% transmission. Reflection spectra of non free-standing counter parts had 2.5% and 10% reflection for 40mA and 120mA respectively.

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Published

2011-10-24

How to Cite

[1]
L Lopez, K Supnet, A Mabilangan, N Saplagio, R Dizon, A Salvador, and A Somintac, Fabrication and characterization of free-standing porous silicon, Proceedings of the Samahang Pisika ng Pilipinas 29, SPP2011-PB-23 (2011). URL: https://proceedings.spp-online.org/article/view/SPP2011-PB-23.