Large area porous silicon based Distributed Bragg Reflectors with tunable peak reflectivity wavelength

Authors

  • Maria Angela Faustino Department of Physical Science, Polytechnic University of the Philippines Sta. Mesa
  • Michaelrey Cainglet Department of Physical Science, Polytechnic University of the Philippines Sta. Mesa
  • M.R.D. Bagay Department of Physical Science, Polytechnic University of the Philippines Sta. Mesa
  • A.I. Mabilangan National Institute of Physics, University of the Philippines Diliman
  • N.G.E. Saplagio National Institute of Physics, University of the Philippines Diliman
  • Rogelio Dizon Department of Physical Science, Polytechnic University of the Philippines Sta. Mesa
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

P-type silicon (100) substrates of dimensions 2 cm x 2.75 cm were electrochemically etched in ethanoic HF solution to fabricate Distributed Bragg Reflectors (DBRs) at different peak reflectivity wavelengths.The alternating layers were etched by varying the supplied anodic currents at certain etch time. The fabricated DBRs were of maximum%reflectivity 88.07%, 98.30%, 92.22%, and 84.43% at peak reflectivity wavelengths 5300Å, 5900Å, 6200Å, and 7400Å respectively. Larger area means lesser gradient effects on the DBRs since lateral anodization cell was used in etching.

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Published

2011-10-24

How to Cite

[1]
MA Faustino, M Cainglet, M Bagay, A Mabilangan, N Saplagio, R Dizon, A Salvador, and A Somintac, Large area porous silicon based Distributed Bragg Reflectors with tunable peak reflectivity wavelength, Proceedings of the Samahang Pisika ng Pilipinas 29, SPP2011-PB-15 (2011). URL: https://proceedings.spp-online.org/article/view/SPP2011-PB-15.