Molecular beam epitaxy growth of GaAs quantum dots through modified droplet epitaxy

Authors

Jeremy Porquez National Institute of Physics, University of the Philippines Diliman
Karim Omambac National Institute of Physics, University of the Philippines Diliman
John Daniel Vasquez National Institute of Physics, University of the Philippines Diliman
Jessica Pauline Afalla National Institute of Physics, University of the Philippines Diliman
Michael Defensor National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

The growth of uncapped GaAs quantum structures with optical lumines- cence is demonstrated in this paper. Uncapped GaAs quantum dots were grown via modified droplet epitaxy on a semi-insulating GaAs substrate at a temperature of 200 ^◦C using a Riber 32-P MBE facility. The QDs grown has a density of 3 × 10¹⁰cm⁻²with base diameter of 27.1 ± 3.2 nm and height of 10.2 ± 2.4 nm. 10 K photoluminescence experiments show QD PL energy centered 1.660 eV.

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Issue

2011: Proceedings of the 29th Samahang Pisika ng Pilipinas National Physics Congress

Article ID

SPP2011-2B-5

Section

Acoustics, Optics, Photonics

Published

2011-10-24

How to Cite

[1]

J Porquez, K Omambac, JD Vasquez, JP Afalla, M Defensor, A Somintac, and A Salvador, Molecular beam epitaxy growth of GaAs quantum dots through modified droplet epitaxy, Proceedings of the Samahang Pisika ng Pilipinas 29, SPP2011-2B-5 (2011). URL: https://proceedings.spp-online.org/article/view/SPP2011-2B-5.