1.55 μm laser excitation of GaAs and InAs thin films grown on GaSb substrates for intense terahertz emission

Authors

Christopher Que Research Center for Development of Far-Infrared Region, University of Fukui
Elmer Estacio National Institute of Physics, University of the Philippines Diliman
Cyril Sadia National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman
Kohji Yamamoto Research Center for Development of Far-Infrared Region, University of Fukui
Arnel Salvador National Institute of Physics, University of the Philippines Diliman
Masahiko Tani Research Center for Development of Far-Infrared Region, University of Fukui

Abstract

Terahertz (THz) emission from GaAs/p-GaSb and p-InAs/n-GaSb semiconductor structures under a 1.55 μm femtosecond laser excitation is reported. The influence of the GaAs thin film on a p-GaSb substrate is investigated. Results show intense THz emission from GaAs/p-GaSb as compared to bare p-GaSb that could be attributed to the built-in field at the interface of the sample. The GaAs/p-GaSb sample was also compared with bulk p-InAs and p-InAs/n-GaSb emitters.

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Issue

2011: Proceedings of the 29th Samahang Pisika ng Pilipinas National Physics Congress

Article ID

SPP2011-2B-4

Section

Acoustics, Optics, Photonics

Published

2011-10-24

How to Cite

[1]

C Que, E Estacio, C Sadia, A Somintac, K Yamamoto, A Salvador, and M Tani, 1.55 μm laser excitation of GaAs and InAs thin films grown on GaSb substrates for intense terahertz emission, Proceedings of the Samahang Pisika ng Pilipinas 29, SPP2011-2B-4 (2011). URL: https://proceedings.spp-online.org/article/view/SPP2011-2B-4.