Dimension dependence of strain-relaxation in strained silicon nanostructure

Authors

Maria Vanessa Balois National Institute of Physics, University of the Philippines Diliman
Alvarado Tarun National Institute of Physics, University of the Philippines Diliman
Norihiko Hayazawa Nanophotonics Laboratory, RIKEN
Oussama Moutanabbir Max Planck Institute of Microstructure Physics
Satoshi Kawata Nanophotonics Laboratory, RIKEN

Abstract

The dimension dependence of strain-relaxation in strained silicon nanostructure using micro-Raman spectroscopy was investigated. Squares and rectangular structures were studied with lateral dimensions of 800nm, 400nm and 200nm. The rectangular structures had a fixed width of 100nm. It was seen that as the lateral dimensions of the structures became smaller, the compressive strain, relative to the unpatterned εSi, within these structures increased. Hence, these structures became more relaxed. Also, all structures were more relaxed at the edges compared to their centers. These relaxations were attributed to be caused by the formation of free surfaces during patterning of the nanostructures.

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Issue

2011: Proceedings of the 29th Samahang Pisika ng Pilipinas National Physics Congress

Article ID

SPP2011-2B-2

Section

Acoustics, Optics, Photonics

Published

2011-10-24

How to Cite

[1]

MV Balois, A Tarun, N Hayazawa, O Moutanabbir, and S Kawata, Dimension dependence of strain-relaxation in strained silicon nanostructure, Proceedings of the Samahang Pisika ng Pilipinas 29, SPP2011-2B-2 (2011). URL: https://proceedings.spp-online.org/article/view/SPP2011-2B-2.