Monitoring the Presence of Cu₂O and CuO during thermal oxidation of copper thin film via In Situ measurement of transmittance

Authors

Jennifer Damasco Ty National Institute of Physics, University of the Philippines Diliman
Marianne Lorene Macailing National Institute of Physics, University of the Philippines Diliman
Ivan Culaba Department of Physics, Ateneo de Manila University
Roland Sarmago National Institute of Physics, University of the Philippines Diliman

Abstract

The formation of Cu₂O and CuO from thermally oxidizing a copper thin film deposited on a glass substrate is monitored by looking at the transmittance when a 633 nm laser light is incident on the copper thin film during oxidation. Transmittance increases initially and then plateaus for samples oxidized at a maximum temperature of 204°C, indicating the formation of Cu₂O. Transmittance increases initially and then gradually declines for samples oxidized at a maximum temperature of 378°C, indicating the formation of CuO. The films have been characterized using SEM, EDX, and UV/Vis analysis.

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Issue

2011: Proceedings of the 29th Samahang Pisika ng Pilipinas National Physics Congress

Article ID

SPP2011-6C-4

Section

Condensed Matter and Materials Physics

Published

2011-10-24

How to Cite

[1]

J Damasco Ty, ML Macailing, I Culaba, and R Sarmago, Monitoring the Presence of Cu2O and CuO during thermal oxidation of copper thin film via In Situ measurement of transmittance, Proceedings of the Samahang Pisika ng Pilipinas 29, SPP2011-6C-4 (2011). URL: https://proceedings.spp-online.org/article/view/SPP2011-6C-4.