Simulation of Aluminum Gallium Arsenide/Gallium Arsenide (AlGaAs/GaAs) High Electron Mobility Transistor (HEMTs) energy band diagram with spacer using shooting method
Abstract
Variable effective-mass shooting method is used to generate the Aluminum Gallium Arsenide/Gallium Arsenide (AlGaAs/GaAs) with mole fraction χ equal to 0.3 High Electron Mobility Transistors (HEMTs) energy band diagram with eigenenergies and their corresponding wavefunctions. Increasing doping concentration shows more band bending graphs that agree with the theoretical description of a HEMT heterostructure layer.
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Celebrating new ideas in physics
24-26 October 2011, University of the Philippines Diliman, Quezon City